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FDD5N53TM_WSN-Channel 530 V 4A (Tc) 40W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-FDD5N5-1014325
ManufacturerOnsemi
MPN #.FDD5N53TM_WS
Estimated Lead Time-
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Technical Specifications
SeriesUniFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDD5
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)530 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)640 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 2A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDD5N53TM_WS is an N-channel MOSFET produced by Onsemi, featuring a high voltage capacity of 530 V and a current capability of up to 4A when attached to a thermal control (Tc). It is designed for surface mounting, employing a TO-252AA package which provides a compact form factor suitable for integration into various systems. This MOSFET showcases a power dissipation of 40W under thermal control conditions and operates efficiently with a gate-source voltage of 5V at a current of 250µA. Its on-state resistance is measured at 1.5 Ohm when conducting a 2A current with a gate voltage of 10V. This component is engineered to offer reliable performance in voltage-switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.