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FDD3N40TFN-Channel 400 V 2A (Tc) 30W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-FDD3N4-1001192
ManufacturerOnsemi
MPN #.FDD3N40TF
Estimated Lead Time-
SampleGet Free Sample
DatasheetFDD3N40, FDU3N40(PDF)
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Technical Specifications
SeriesUniFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDD3
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)225 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance3.4Ohm @ 1A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDD3N40TF by Onsemi is a surface-mount N-channel MOSFET housed in a TO-252AA package. It is designed to handle a maximum continuous drain current of 2A at a case temperature (Tc), with a power dissipation capacity of 30W (Tc). It boasts a drain-source voltage rating of 400V and features a maximum on-resistance of 3.4 ohms when conducting 1A of current with a gate-source voltage of 10V. Additionally, the device can withstand gate-source voltages ranging from -30V to +30V, making it suitable for use in various electronic configurations requiring these specifications.
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