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FDD1600N10ALZDN-Channel 100 V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252 (DPAK)
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ABRmicro #.ABR2045-FDD160-1048671
ManufacturerOnsemi
MPN #.FDD1600N10ALZD
Estimated Lead Time-
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DatasheetFDD1600N10ALZD(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDD160
Continuous Drain Current (ID) @ 25°C6.8A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.61 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)225 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation14.9W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 3.4A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 250µA
Package / CaseTO-252-5, DPAK (4 Leads + Tab), TO-252AD
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)