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FDC86244N-Channel 150 V 2.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

1:$0.7180

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ABRmicro #.ABR2045-FDC862-995273
ManufacturerOnsemi
MPN #.FDC86244
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDC86244(PDF)
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In Stock: 5030
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7180
Ext. Price$ 0.7180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7180$0.7180
10$0.5900$5.8970
100$0.4580$45.7940
500$0.3890$194.4380
1000$0.3160$315.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDC8624
Continuous Drain Current (ID) @ 25°C2.3A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)345 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance144mOhm @ 2.3A, 10V
Package Type (Mfr.)SuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDC86244 is a surface-mount N-Channel MOSFET from Onsemi, encapsulated in a SuperSOT™-6 package. It is designed to handle a maximum voltage of 150 V and a continuous current of 2.3A. The device has a power dissipation capability of 1.6W under specified conditions. It features a gate-to-source voltage rating of ±20V and a total gate charge of 6 nC at 10 V, making it suitable for switching applications requiring efficient performance at low gate drive voltages of 6V and 10V.
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