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FDC636PP-Channel 20 V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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ABRmicro #.ABR2045-FDC636-1020009
ManufacturerOnsemi
MPN #.FDC636P
Estimated Lead Time-
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DatasheetDatasheetFDC636P(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDC636
Continuous Drain Current (ID) @ 25°C2.8A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)8.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)390 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance130mOhm @ 2.8A, 4.5V
Package Type (Mfr.)SuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDC636P
Environmental Information
onsemi RoHS
PCN Design/Specification
FDC6x, NDC7003P Die 11/May/2007Mold Compound 08/April/2008
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDC636P by Onsemi is a P-Channel MOSFET housed in a compact SuperSOT™-6 surface mount package. It is designed to handle a maximum voltage of 20 V and can conduct a continuous current of up to 2.8 A, with a power dissipation capacity of 1.6 W when mounted on a suitable thermal substrate. This MOSFET features a low on-state resistance of 130 milliohms at a gate-source voltage of 4.5 V and a drain current of 2.8 A, ensuring efficient operation. Additionally, it has a gate charge of 8.5 nC at 4.5 V, which facilitates rapid switching performance suitable for high-speed applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.