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FDC30N20DZN-Channel 30 V 4.6A (Ta) 960mW (Ta) Surface Mount SuperSOT™-6

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ABRmicro #.ABR2045-FDC30N-1000150
ManufacturerOnsemi
MPN #.FDC30N20DZ
Estimated Lead Time-
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DatasheetDatasheetFDC30N20DZ(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDC30N20
Continuous Drain Current (ID) @ 25°C4.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)535 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation960mW (Ta)
RDS(on) Drain-to-Source On Resistance31mOhm @ 4.6A, 10V
Package Type (Mfr.)SuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDC30N20DZ
Environmental Information
Material Declaration FDC30N20DZonsemi REACHonsemi RoHS
PCN Design/Specification
Marking Change 07/Oct/2022Marking Change 17/Nov/2021
PCN Obsolescence/ EOL
Mult Dev EOL 30/Sep/2022
PCN Packaging
Marking Change 07/Oct/2022Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The FDC30N20DZ, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mount applications in a compact SuperSOT™-6 package. It operates with a maximum drain-source voltage of 30V and can handle a continuous drain current of 4.6A at the specified ambient temperature. The device offers a low on-resistance of 31mOhm when driven at a gate-source voltage of 10V, enhancing its efficiency for switching applications. Additionally, it can dissipate up to 960mW power, making it a reliable choice for compact electronic designs where space and power efficiency are critical.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.