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FDBL0260N100N-Channel 100 V 200A (Tc) 3.5W (Ta), 250W (Tc) Surface Mount 8-HPSOF
1:$5.0680
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDBL02-968872
ManufacturerOnsemi
MPN #.FDBL0260N100
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetFDBL0260N100(PDF)
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In Stock: 2751
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.0680
Ext. Price$ 5.0680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.0680$5.0680
10$4.2530$42.5320
100$3.4400$344.0380
500$3.0590$1529.4690
1000$2.6190$2619.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDBL0260
Continuous Drain Current (ID) @ 25°C200A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)116 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9265 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.5W (Ta), 250W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 80A, 10V
Package Type (Mfr.)8-HPSOF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerSFN
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Datasheets
Environmental Information
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDBL0260N100 is a semiconductor component manufactured by Onsemi, featuring an N-Channel MOSFET design. It is capable of handling a voltage of up to 100 V and a current of 200 A when mounted on a circuit board with appropriate thermal conditions (Tc). The device exhibits a power dissipation of 3.5 W when measured in air (Ta) and 250 W with an adequate heat sink (Tc). Packaged in a compact 8-HPSOF surface mount format, this MOSFET includes a gate threshold voltage of 4V at 250µA. Additionally, it has an input capacitance of 9265 pF at 50 V, contributing to its performance characteristics in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.