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FDBL0200N100N-Channel 100 V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF
1:$6.2400
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ABRmicro #.ABR2045-FDBL02-951254
ManufacturerOnsemi
MPN #.FDBL0200N100
Estimated Lead Time24 Weeks
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DatasheetFDBL0200N100(PDF)
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In Stock: 1846
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.2400
Ext. Price$ 6.2400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.2400$6.2400
10$5.3510$53.5080
100$4.4580$445.8250
500$3.9340$1967.2190
1000$3.5410$3541.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDBL0200
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)133 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9760 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation429W (Tc)
RDS(on) Drain-to-Source On Resistance2mOhm @ 80A, 10V
Package Type (Mfr.)8-HPSOF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / Case8-PowerSFN
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Datasheets
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PCN Assembly/Origin
PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDBL0200N100 is an N-channel MOSFET manufactured by Onsemi, designed for high-performance power applications. It is capable of handling a continuous current of 300A with a voltage rating of 100V. The device features a low on-resistance of 2 milliohms at 80A and 10V, ensuring efficient operation with minimal energy loss. Additionally, it supports a power dissipation of 429W in appropriate thermal conditions. This MOSFET is configured for surface mounting in an 8-HPSOF package, making it suitable for compact circuit designs. Its input capacitance is measured at 9760 pF at 50V, contributing to its suitability in fast-switching environments.
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