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FDBL0150N60N-Channel 60 V 240A (Tc) 357W (Tj) Surface Mount 8-HPSOF
1:$6.0860
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ABRmicro #.ABR2045-FDBL01-1005536
ManufacturerOnsemi
MPN #.FDBL0150N60
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetFDBL0150N60(PDF)
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In Stock: 1039
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.0860
Ext. Price$ 6.0860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.0860$6.0860
10$5.2190$52.1900
100$4.3500$434.9880
500$3.8380$1918.8750
1000$3.4540$3454.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDBL0150
Continuous Drain Current (ID) @ 25°C240A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)169 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10300 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation357W (Tj)
RDS(on) Drain-to-Source On Resistance1.5mOhm @ 80A, 10V
Package Type (Mfr.)8-HPSOF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerSFN
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Datasheets
Environmental Information
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDBL0150N60 from Onsemi is an N-Channel MOSFET designed for high-performance power applications. It can handle a high maximum continuous current of 240A and offers a power dissipation capacity of 357W at optimal junction temperatures. Encased in a surface-mount 8-HPSOF package, this MOSFET features a low on-resistance of 1.5 milliohms at 80A with a gate voltage of 10V, facilitating efficient operation with minimal power loss. It presents a gate threshold voltage of 4V at 250µA and a substantial input capacitance of 10300 pF at 30V, supporting effective voltage and current management in demanding settings.
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