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FDB9503L-F085P-Channel 40 V 110A (Tc) 333W (Tj) Surface Mount TO-263 (D2PAK)

1:$4.3510

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDB950-940630
ManufacturerOnsemi
MPN #.FDB9503L-F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDB9503L-F085(PDF)
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In Stock: 462
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.3510
Ext. Price$ 4.3510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.3510$4.3510
10$3.6520$36.5180
100$2.9550$295.4810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDB9503
Continuous Drain Current (ID) @ 25°C110A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)255 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8320 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation333W (Tj)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 80A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDB9503L-F085
Environmental Information
Material Declaration FDB9503L-F085onsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Assembly/Origin
Cancellation 19/Oct/2021
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
EOL NOTICE 30/Mar/2023
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB9503L-F085 is a P-channel MOSFET manufactured by Onsemi, featuring a 40V drain-source voltage rating and capable of handling a continuous current of up to 110A at thermal equilibrium (Tc). With a maximum power dissipation of 333W under junction temperature conditions, this component is designed for surface mounting in a TO-263 (D2PAK) package. It demonstrates a gate threshold voltage of 3V at 250µA and a low on-resistance of 2.6mOhm at an 80A load with a 10V gate-source voltage. Additionally, the part has an input capacitance of 8320 pF at a 20V drain-source voltage.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.