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FDB24AN06LA0N-Channel 60 V 7.8A (Ta), 40A (Tc) 75W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FDB24A-1023125
ManufacturerOnsemi
MPN #.FDB24AN06LA0
Estimated Lead Time-
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDB24
Continuous Drain Current (ID) @ 25°C7.8A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 40A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB24AN06LA0 is an N-channel MOSFET manufactured by Onsemi, designed for efficient performance in power management applications. It supports a drain-to-source voltage of 60 V and offers a continuous drain current of 7.8A when measured at the ambient temperature and 40A under specific conditions. This component features a maximum power dissipation of 75W when properly cooled. The MOSFET is encapsulated in a TO-263 (D2PAK) surface-mountable package, enabling compact and durable design configurations. It exhibits a gate charge of 21 nC at 5 V and has an input capacitance of 1850 pF at 25 V, making it suitable for fast switching applications.
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