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FDB15N50N-Channel 500 V 15A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK)

1:$3.2570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDB15N-1006479
ManufacturerOnsemi
MPN #.FDB15N50
Estimated Lead Time48 Weeks
SampleGet Free Sample
DatasheetDatasheetFDP15N50(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.2570
Ext. Price$ 3.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.2570$3.2570
10$2.7320$27.3170
100$2.2100$221.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDB15
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP15N50
Environmental Information
Material Declaration FDB15N50onsemi RoHS
PCN Assembly/Origin
Assembly Change 09/May/2023
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB15N50 from Onsemi is an N-Channel MOSFET designed for efficient performance in high-power applications. It features a voltage rating of 500 V and a current capability of 15A with a power dissipation capacity of 300W, all within a compact TO-263 (D2PAK) surface-mount package. The device exhibits a gate charge of 41 nC at 10 V and a capacitance of 1850 pF at 25 V, indicating its suitability for handling significant charge and voltage conditions. This component is engineered to provide reliable operation in scenarios demanding robust electrical and thermal performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.