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FDB075N15A_SN00284N-Channel 150 V 130A (Tc) 333W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-FDB075-925424
ManufacturerOnsemi
MPN #.FDB075N15A_SN00284
Estimated Lead Time-
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDB075
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7350 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation333W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 100A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi part FDB075N15A_SN00284 is an N-Channel MOSFET designed for power management applications. It operates with a maximum voltage rating of 150 V and a current capacity of 130A at the case temperature (Tc). This surface mount component comes in a TO-263 (D2PAK) package, providing efficient thermal management with a power dissipation capability of 333W. The MOSFET features a low on-state resistance of 7.5 milliohms when operated at 100A and 10V, and it supports a gate-source voltage of ±20V. It is well-suited for high-current applications requiring reliable switching and low conduction losses.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.