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FDB024N04AL7N-Channel 40 V 100A (Tc) 214W (Tc) Surface Mount TO-263-7

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ABRmicro #.ABR2045-FDB024-1007129
ManufacturerOnsemi
MPN #.FDB024N04AL7
Estimated Lead Time-
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DatasheetDatasheetFDB024N04AL7(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDB024
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)109 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7300 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 80A, 10V
Package Type (Mfr.)TO-263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Extended Links
Datasheets
FDB024N04AL7
Environmental Information
Material Declaration FDB024N04AL7onsemi REACHonsemi RoHS
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017TO263 31/Aug/2016
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB024N04AL7, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mount applications, housed in a TO-263-7 package. It supports a drain-source voltage of up to 40V and can handle a continuous current of 100A at a typical case temperature, with a power dissipation of 214W under standard conditions. The device exhibits a threshold voltage of 10V, showing a gate charge of 3V at a current of 250µA, and features a total gate charge capacitance of 7300 picofarads when tested at 25V, emphasizing its capability to handle substantial current loads.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.