FDB0170N607LN-Channel 60 V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7
1:$3.6250
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ABRmicro #.ABR2045-FDB017-925998
ManufacturerOnsemi
MPN #.FDB0170N607L
Estimated Lead Time28 Weeks
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Datasheet
FDB0170N607L Datasheet(PDF)
FDB0170N607L Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.6250
Ext. Price$ 3.6250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6250$3.6250
10$3.0430$30.4300
100$2.4620$246.1810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDB0170
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)243 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)19250 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 250W (Tc)
RDS(on) Drain-to-Source On Resistance1.4mOhm @ 39A, 10V
Package Type (Mfr.)TO-263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB0170N607L is a high-performance N-channel power MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 60 V and a current of 300A under specific thermal conditions (Tc). The device is built in a compact TO-263-7 surface mount package which allows for efficient thermal management, capable of dissipating up to 250W with appropriate cooling. It features a total gate charge of 243 nC at 10 V and can sustain gate-to-source voltages up to ±20V. With a gate threshold voltage of 4V at a test current of 250µA, this MOSFET is suitable for applications requiring robust switching performance and high current handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.