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FDA28N50N-Channel 500 V 28A (Tc) 310W (Tc) Through Hole TO-3PN
1:$4.0510
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ABRmicro #.ABR2045-FDA28N-1004711
ManufacturerOnsemi
MPN #.FDA28N50
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetFDA28N50(PDF)
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In Stock: 290
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.0510
Ext. Price$ 4.0510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0510$4.0510
30$3.2090$96.2630
120$2.7510$330.0980
510$2.4460$1247.3960
1020$2.0930$2134.9880
2010$1.9720$3963.7200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDA28
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5140 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance155mOhm @ 14A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDA28N50 is a power MOSFET manufactured by Onsemi, designed for high efficiency and reliability. It features an N-Channel configuration with a voltage rating of 500 V and a current capacity of 28A (when measured at the case temperature). Encased in a TO-3PN package, it offers a substantial power dissipation capability of 310W under similar thermal conditions. The component exhibits a capacitance of 5140 pF at 25 V and can handle gate-source voltage variations up to ±30 V. This makes it suitable for managing significant power loads, particularly in electronic circuits requiring substantial voltage and current handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.