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FDA28N50N-Channel 500 V 28A (Tc) 310W (Tc) Through Hole TO-3PN

1:$4.0510

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ABRmicro #.ABR2045-FDA28N-1004711
ManufacturerOnsemi
MPN #.FDA28N50
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetFDA28N50(PDF)
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In Stock: 290
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.0510
Ext. Price$ 4.0510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0510$4.0510
30$3.2090$96.2630
120$2.7510$330.0980
510$2.4460$1247.3960
1020$2.0930$2134.9880
2010$1.9720$3963.7200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDA28
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5140 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance155mOhm @ 14A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDA28N50 is a power MOSFET manufactured by Onsemi, designed for high efficiency and reliability. It features an N-Channel configuration with a voltage rating of 500 V and a current capacity of 28A (when measured at the case temperature). Encased in a TO-3PN package, it offers a substantial power dissipation capability of 310W under similar thermal conditions. The component exhibits a capacitance of 5140 pF at 25 V and can handle gate-source voltage variations up to ±30 V. This makes it suitable for managing significant power loads, particularly in electronic circuits requiring substantial voltage and current handling capabilities.
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