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FDA16N50N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN

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ABRmicro #.ABR2045-FDA16N-990621
ManufacturerOnsemi
MPN #.FDA16N50
Estimated Lead Time-
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DatasheetDatasheetFDA16N50(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDA16
Continuous Drain Current (ID) @ 25°C16.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1945 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation205W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 8.3A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDA16N50
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDA16N50, manufactured by Onsemi, is an N-channel MOSFET designed for high-efficiency power management applications. This component can handle a maximum voltage of 500 V and a continuous current of up to 16.5 A when mounted on a case with adequate heat dissipation capabilities, supporting a power dissipation of 205W. Packaged in a TO-3PN through-hole format, the FDA16N50 features gate-source voltage handling of ±30V and a gate threshold voltage of 5V at a gate current of 250µA, making it suitable for high-power and high-voltage environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.