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FDA16N50-F109N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN

1:$2.5910

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ABRmicro #.ABR2045-FDA16N-934938
ManufacturerOnsemi
MPN #.FDA16N50-F109
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetFDA16N50(_F109)(PDF)
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In Stock: 167
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.5910
Ext. Price$ 2.5910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5910$2.5910
30$2.0490$61.4550
120$1.7560$210.7580
510$1.5620$796.5560
1020$1.3370$1363.3580
2010$1.2590$2530.7160
5010$1.2080$6052.3930
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDA16N50
Continuous Drain Current (ID) @ 25°C16.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1945 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation205W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 8.3A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDA16N50(_F109)
Environmental Information
Material Declaration FDA16N50-F109onsemi RoHS
PCN Assembly/Origin
Mult Dev 03/Nov/2023
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Postponed Qualification 27/Dec/2022
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDA16N50-F109 is a semiconductor device manufactured by Onsemi, featuring an N-Channel MOSFET with a breakdown voltage of 500 volts and a current rating of 16.5 amperes under conditions of a case temperature. This part is designed for high-efficiency performance, offering a power dissipation of 205 watts at the case temperature due to its Through Hole TO-3PN package. It has a gate threshold voltage of ±30 volts and a gate charge of 1945 picofarads at 25 volts, making it suitable for precise voltage regulation and power management tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.