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FCPF7N60N-Channel 600 V 7A (Tc) 31W (Tc) Through Hole TO-220F-3

1:$2.3420

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCPF7N-1008899
ManufacturerOnsemi
MPN #.FCPF7N60
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCP7N60, FCPF7N60(PDF)
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In Stock: 681
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3420
Ext. Price$ 2.3420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3420$2.3420
50$1.8830$94.1380
100$1.5490$154.9130
500$1.3110$655.5630
1000$1.1110$1111.3750
2000$1.0570$2114.3750
5000$1.0170$5084.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCPF7
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)920 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation31W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCP7N60, FCPF7N60
Environmental Information
Material Declaration FCPF7N60onsemi RoHS
PCN Assembly/Origin
Assembly and Test Qualification 26/Jul/2023
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCPF7N60 by Onsemi is an N-Channel MOSFET designed for high-voltage applications, with a breakdown voltage of 600 V and a continuous drain current of 7 A when the case temperature is properly managed. Housed in a TO-220F-3 through-hole package, this semiconductor component can dissipate up to 31 watts of power under ideal conditions. Key electrical characteristics include a maximum gate-source voltage of ±30 V, an input capacitance of 920 pF measured at 25 V, and a gate threshold voltage of 5 V with a drain-source current of 250 µA. The design and specifications make it suitable for various robust electronic and power management tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.