ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FCPF600N65S3R0LN-Channel 650 V 6A (Tc) 24W (Tc) Through Hole TO-220F-3

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCPF60-934824
ManufacturerOnsemi
MPN #.FCPF600N65S3R0L
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCPF600N65S3R0L(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 132
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesSuperFET® III
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFCPF600
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)465 pF @ 400 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation24W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 3A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 600µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCPF600N65S3R0L
Environmental Information
Material Declaration FCPF600N65S3R0Lonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly Chg 14/Feb/2020
PCN Design/Specification
SuperFet Datasheet Chg 30/Jul/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCPF600N65S3R0L is a semiconductor component manufactured by Onsemi, specifically an N-channel MOSFET designed for high voltage applications. It operates with a maximum drain-source voltage of 650 volts and can handle a continuous current of 6 amperes at the case temperature (Tc). The MOSFET comes in a TO-220F-3 package, making it suitable for through-hole mounting. It features an on-state resistance of 600 milliohms when driven with a gate-source voltage of 10V and a current of 3A. The device supports a maximum power dissipation of 24 watts at Tc, with a gate threshold voltage requirement of 4.5 volts at a gate current of 600µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.