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FCPF1300N80ZN-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3
1:$2.1000
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCPF13-914723
ManufacturerOnsemi
MPN #.FCPF1300N80Z
Estimated Lead Time-
SampleGet Free Sample
DatasheetFCPF1300N80Z(PDF)
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 2.1000
Ext. Price$ 2.1000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1000$2.1000
10$1.7450$17.4500
100$1.3890$138.9000
500$1.1750$587.5000
1000$0.9970$997.0000
2000$0.9480$1896.0000
5000$0.9120$4560.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperFET® II
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCPF1300
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)880 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation24W (Tc)
RDS(on) Drain-to-Source On Resistance1.3Ohm @ 2A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 400µA
Package / CaseTO-220-3 Full Pack
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Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)