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FCPF125N65S3N-Channel 650 V 24A (Tc) 38W (Tc) Through Hole TO-220F

1:$4.1120

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCPF12-979434
ManufacturerOnsemi
MPN #.FCPF125N65S3
Estimated Lead Time-
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DatasheetDatasheetFCPF125N65S3(PDF)
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In Stock: 394
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.1120
Ext. Price$ 4.1120
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.1120$4.1120
50$3.2580$162.8810
100$2.7920$279.2250
500$2.4820$1241.0000
1000$2.1250$2125.0000
2000$2.0010$4001.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET® III
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCPF125
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1790 pF @ 400 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 12A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 2.4mA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCPF125N65S3
Environmental Information
Material Declaration FCPF125N65S3onsemi REACHonsemi RoHS
PCN Assembly/Origin
Assembly and Test Qualification 26/Jul/2023
PCN Design/Specification
Logo 17/Aug/2017SuperFet Datasheet Chg 30/Jul/2019
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCPF125N65S3 is a discrete N-Channel MOSFET from Onsemi, designed for efficient power switching applications. It operates at a voltage rating of 650 V and can handle a current of 24A at a case temperature (Tc). It is capable of dissipating power up to 38W under Tc conditions. This MOSFET is encapsulated in a TO-220F package, which facilitates through-hole mounting. Its electrical characteristics include a drain-source capacitance of 1790 pF at 400 V, and it exhibits an on-resistance of 125 milliohms when conducting 12A at a gate voltage of 10V. The device is engineered for reliable performance with its metal oxide semiconductor structure.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.