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FCP9N60NN-Channel 600 V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FCP9N6-926087
ManufacturerOnsemi
MPN #.FCP9N60N
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCPF9N60N, FCPF9N60T(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesSuperMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCP9N60
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1240 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83.3W (Tc)
RDS(on) Drain-to-Source On Resistance385mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCPF9N60N, FCPF9N60T
Environmental Information
Material Declaration FCP9N60Nonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 29/Mar/2022
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCP9N60N is an N-channel MOSFET manufactured by Onsemi, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 600 V and a continuous drain current of 9A at a case temperature (Tc). The device is capable of handling up to 83.3 watts of power dissipation in its TO-220-3 through-hole package. This MOSFET offers a gate threshold voltage of 10V and can tolerate maximum gate-source voltages of ±30V. It has an input capacitance of 1240 pF at 100 V, making it suitable for various moderate to high-power electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.