The FCP650N80Z is an N-Channel MOSFET produced by Onsemi, designed for efficient power handling with a high voltage tolerance of 800 V and a current capacity of 10A when measured at the case temperature (Tc). It offers a substantial power dissipation capability of 162W at Tc, making it suitable for a variety of demanding electrical environments. This MOSFET comes in a standard TO-220 through-hole package, facilitating easy integration into circuit designs. Key electrical characteristics include an input capacitance of 1565 pF at 100 V and a gate threshold voltage of 4.5V at a drain-source voltage of 10V when the gate current is 800µA, reflecting its performance in controlling high voltage circuits.