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FCP25N60NN-Channel 600 V 25A (Tc) 216W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FCP25N-989834
ManufacturerOnsemi
MPN #.FCP25N60N
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCP25N60N_F102(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSupreMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCP25
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3352 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation216W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 12.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCP25N60N_F102
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCP25N60N is an N-channel MOSFET manufactured by Onsemi, designed for high voltage and current handling. It operates at a maximum voltage of 600 V and can handle a continuous current of 25 A when properly heat-sinked. The power dissipation capacity of this device is rated at 216 W. It is housed in a TO-220-3 package for through-hole mounting. Key electrical characteristics include a gate-source threshold voltage of 4V at a gate current of 250µA, a total gate charge of 74 nC at 10 V, and an input capacitance of 3352 pF at 100 V. These specifications make it suitable for various high-power applications where efficient switching is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.