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FCP170N60N-Channel 600 V 22A (Tc) 227W (Tc) Through Hole TO-220-3
1:$3.7250
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCP170-913016
ManufacturerOnsemi
MPN #.FCP170N60
Estimated Lead Time-
SampleGet Free Sample
DatasheetFCP170N60(PDF)
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In Stock: 553
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 3.7250
Ext. Price$ 3.7250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.7250$3.7250
50$2.9500$147.5000
100$2.5290$252.9000
500$2.4730$1236.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperFET® II
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCP170
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2860 pF @ 380 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation227W (Tc)
RDS(on) Drain-to-Source On Resistance170mOhm @ 11A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-220-3
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Environmental Information
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)