ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FCP11N60FN-Channel 600 V 11A (Tc) 125W (Tc) Through Hole TO-220-3

1:$2.6920

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCP11N-960856
ManufacturerOnsemi
MPN #.FCP11N60F
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCP11N60F(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1094
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.6920
Ext. Price$ 2.6920
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6920$2.6920
50$2.1350$106.7280
100$1.8300$182.9630
500$1.6270$813.3440
1000$1.3930$1392.9380
2000$1.3120$2624.3750
5000$1.2580$6290.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCP11
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1490 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCP11N60F
Environmental Information
Material Declaration FCP11N60Fonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FCP11N60F is an N-channel MOSFET designed for high-voltage applications, with a maximum voltage rating of 600 V and a continuous drain current of 11 A. The device can dissipate up to 125 W of power when appropriately mounted, thanks to its Through-Hole TO-220-3 package, which aids in heat management. The MOSFET operates with a gate-source voltage of 10 V and features a capacitive load, with a total gate charge of 1490 pF at 25 V. This combination of features makes it suitable for efficient switching and energy management in demanding environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.