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FCP110N65FN-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-220-3

1:$3.9320

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ABRmicro #.ABR2045-FCP110-961804
ManufacturerOnsemi
MPN #.FCP110N65F
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCP110N65F(PDF)
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In Stock: 560
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.9320
Ext. Price$ 3.9320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.9320$3.9320
50$3.1140$155.7090
100$2.6700$267.0060
500$2.6120$1305.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFRFET®, SuperFET® II
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCP110
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4895 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation357W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 17.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 3.5mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCP110N65F
Environmental Information
Material Declaration FCP110N65Fonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly/Mat Chg 16/Jan/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCP110N65F is a robust N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. It operates at a maximum voltage of 650 V and can handle a continuous drain current of 35A, making it suitable for medium to high-power applications. The device features a power dissipation of 357W at the case (Tc) temperature, housed in a compact TO-220-3 through-hole package, facilitating easy mounting and heat dissipation. It also has a gate-source voltage rating of ±20V, with an input capacitance of 4895 pF at 100 V, which indicates its capability to handle substantial power loads with effective gate control.
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