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FCMT360N65S3N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)

1:$3.1720

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCMT36-962689
ManufacturerOnsemi
MPN #.FCMT360N65S3
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetFCMT360N65S3(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.1720
Ext. Price$ 3.1720
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.1720$3.1720
10$2.6660$26.6580
100$2.1570$215.6880
500$1.9170$958.3750
1000$1.6420$1641.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET® III
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFCMT360
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)730 pF @ 400 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5A, 10V
Package Type (Mfr.)4-PQFN (8x8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 200µA
Package / Case4-PowerTSFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCMT360N65S3
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCMT360N65S3 from Onsemi is an N-Channel MOSFET designed for high-efficiency performance in a compact surface-mount package. This component can handle a maximum voltage of 650 V and a continuous current of 10 A when attached to a suitable heatsink to manage the thermal output. It is housed in a 4-PQFN package size of 8x8 mm, offering a power dissipation capacity of 83 W under specified conditions. The device features a total gate charge of 18 nC at 10 V, making it suitable for fast switching applications. This MOSFET leverages advances in semiconductor processing to deliver robust performance in electronic circuits requiring efficient power management.
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