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FCH25N60NN-Channel 600 V 25A (Tc) 216W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-FCH25N-927291
ManufacturerOnsemi
MPN #.FCH25N60N
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCH25N60N(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesSupreMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCH25N60
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3352 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation216W (Tc)
RDS(on) Drain-to-Source On Resistance126mOhm @ 12.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCH25N60N
Environmental Information
Material Declaration FCH25N60Nonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mold Compound Change 17/Dec/2021
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 29/Mar/2022
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCH25N60N is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. This component is rated for a maximum drain-source voltage of 600 V and can handle a continuous current of 25 A under specified conditions. It exhibits a relatively low on-resistance of 126 milliohms when a gate voltage of 10 V and a drain current of 12.5 A are applied. The device is capable of dissipating up to 216 watts of power when mounted appropriately, provided in a robust TO-247-3 package suited for through-hole mounting. Additionally, it can withstand gate-source voltages of up to ±30 V, offering significant versatility in diverse electrical circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.