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FCH125N60EN-Channel 600 V 29A (Tc) 278W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-FCH125-994513
ManufacturerOnsemi
MPN #.FCH125N60E
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCH125N60E(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperFET® II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCH125
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2990 pF @ 380 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation278W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 14.5A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCH125N60E
Environmental Information
Material Declaration FCH125N60Eonsemi RoHS
PCN Assembly/Origin
TO247 12-Apr-2022
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 29/Mar/2022
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCH125N60E is a power MOSFET manufactured by Onsemi, designed for high-efficiency performance in demanding applications. Encased in a TO-247-3 package suitable for through-hole mounting, this N-Channel MOSFET is capable of handling a maximum voltage of 600 V and a continuous current of 29A at a case temperature. It boasts a substantial power dissipation capacity of up to 278W at the case temperature, making it adept for high-power applications. Featuring a gate threshold voltage of 3.5V at 250µA and a capacitance of 2990 pF at 380 V, the FCH125N60E combines robust electrical characteristics with efficient thermal management in its design.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.