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FCH060N80-F155N-Channel 800 V 56A (Tc) 500W (Tc) Through Hole TO-247-3

1:$14.7890

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ABRmicro #.ABR2045-FCH060-938894
ManufacturerOnsemi
MPN #.FCH060N80-F155
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCH060N80(PDF)
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In Stock: 597
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 14.7890
Ext. Price$ 14.7890
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$14.7890$14.7890
10$13.0320$130.3160
450$10.2140$4596.2160
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET® II
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCH060
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)350 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14685 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 29A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 5.8mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCH060N80
Environmental Information
Material Declaration FCH060N80-F155onsemi RoHS
PCN Assembly/Origin
Mult Dev Source Add 5/Aug/2022
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCH060N80-F155 from Onsemi is a high-voltage N-channel MOSFET designed for efficient power management. It can handle a maximum voltage of 800 volts and a continuous current of 56 amps at its case temperature, delivering a powerful 500 watts. The device features a TO-247-3 through-hole package, which offers robust mechanical stability and efficient heat dissipation. With a gate-source voltage tolerance of ±20V and a gate threshold voltage of 4.5V at 5.8mA, this MOSFET provides reliable performance for high-power applications.
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