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FCH041N65EFLN4N-Channel 650 V 76A (Tc) 595W (Tc) Through Hole TO-247-4

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ABRmicro #.ABR2045-FCH041-1033188
ManufacturerOnsemi
MPN #.FCH041N65EFLN4
Estimated Lead Time-
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DatasheetDatasheetFCH041N65EFLN4(PDF)
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In Stock: 38
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesFRFET®, SuperFET® II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFCH041
Continuous Drain Current (ID) @ 25°C76A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)298 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12560 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation595W (Tc)
RDS(on) Drain-to-Source On Resistance41mOhm @ 38A, 10V
Package Type (Mfr.)TO-247-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 7.6mA
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCH041N65EFLN4
Environmental Information
Material Declaration FCH041N65EFLN4onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly/DS Chg 6/Jan/2019
PCN Design/Specification
Dimension/Color Change 24/Feb/2021
PCN Packaging
Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCH041N65EFLN4 is an N-Channel MOSFET manufactured by Onsemi that features a maximum voltage rating of 650 V and a current rating of 76A at a case temperature (Tc) of 25°C. This MOSFET has a powerful power dissipation capacity of up to 595W at Tc. It comes in a TO-247-4 package designed for through-hole mounting. The device is characterized by a gate-source voltage of ±20V and operates with a gate charge of 5V at 7.6mA. Additionally, it offers a low on-resistance of 41 milliohms when conducting a current of 38A with a gate-source voltage of 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.