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FCD600N65S3R0N-Channel 650 V 6A (Tc) 54W (Tc) Surface Mount TO-252 (DPAK)

1:$1.4880

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCD600-1022355
ManufacturerOnsemi
MPN #.FCD600N65S3R0
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCD600N65S3R0(PDF)
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In Stock: 1696
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.4880
Ext. Price$ 1.4880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4880$1.4880
10$1.2360$12.3570
100$0.9840$98.3880
500$0.8320$415.9690
1000$0.7060$705.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET® III
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCD600
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)465 pF @ 400 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation54W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 3A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 600µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCD600N65S3R0
Environmental Information
Material Declaration FCD600N65S3R0onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult PN Mold/Source 01/Dec/2023
PCN Design/Specification
SuperFet Datasheet Chg 30/Jul/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCD600N65S3R0 is a semiconductor component manufactured by Onsemi. It is an N-Channel MOSFET designed for high voltage applications, with a maximum drain-source voltage rating of 650 V and a drain current rating of 6A at a case temperature (Tc). This surface-mount device is housed in a TO-252 (DPAK) package and can dissipate up to 54W at Tc. The part features a gate threshold voltage of 10V, a typical gate charge of 11 nC at 10V, and can withstand gate-source voltages up to ±30V, making it suitable for various switching and amplification tasks in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.