The FCB110N65F, manufactured by Onsemi, is a surface-mount power MOSFET designed for high-efficiency energy conversion applications. It features an N-Channel configuration with a maximum voltage rating of 650 V and a continuous current capacity of 35A when properly cooled (at the case temperature, Tc). The device can handle a power dissipation of 357W at Tc, making it suitable for high-power applications. It is housed in a TO-263 (D2PAK) package, which facilitates efficient heat dissipation and compact design integration. Key electrical characteristics include a gate threshold voltage of 10V, an input capacitance of 4895 pF at 100 V, and a total gate charge of 145 nC at 10 V, all of which contribute to its performance in switching applications.