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FCA47N60F_SN00171N-Channel 600 V 47A (Tc) 417W Through Hole TO-3PN

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ABRmicro #.ABR2045-FCA47N-1008480
ManufacturerOnsemi
MPN #.FCA47N60F_SN00171
Estimated Lead Time-
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCA47
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)270 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation417W
RDS(on) Drain-to-Source On Resistance73mOhm @ 23.5A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
onsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Device EOL 19/May/2017
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)