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FCA22N60NN-Channel 600 V 22A (Tc) 205W (Tc) Through Hole TO-3PN

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ABRmicro #.ABR2045-FCA22N-989309
ManufacturerOnsemi
MPN #.FCA22N60N
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCA22N60N(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSupreMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCA22N60
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1950 pF @ 100 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation205W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 11A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCA22N60N
Environmental Information
Material Declaration FCA22N60Nonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Devices Mold Compound 09/Apr/2019
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 29/Mar/2022
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCA22N60N, manufactured by Onsemi, is an N-channel MOSFET featuring a high voltage rating of 600 V and a current capacity of 22A at case temperature (Tc). It is designed with a power dissipation capability of 205W (Tc), allowing it to handle substantial power loads. Packaged in a TO-3PN through-hole configuration, it offers a low on-resistance of 165mOhm at 11A and 10V, minimizing energy losses during operation. The device is characterized by a gate-source voltage of ±30V, catering to robust gate signal applications while maintaining metal-oxide semiconductor field-effect transistor construction.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.