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FCA20N60FN-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-3PN

1:$5.6760

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ABRmicro #.ABR2045-FCA20N-930977
ManufacturerOnsemi
MPN #.FCA20N60F
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFCA20N60F(PDF)
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In Stock: 290
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 5.6760
Ext. Price$ 5.6760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.6760$5.6760
30$4.5010$135.0230
120$3.8570$462.8250
510$3.4290$1748.6310
1020$2.9360$2994.4010
2010$2.7640$5554.7610
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFCA20N60
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)98 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3080 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 10A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FCA20N60F
Environmental Information
Material Declaration FCA20N60Fonsemi REACHonsemi RoHS
PCN Assembly/Origin
Assembly/Test Site 14/Dec/2022
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCA20N60F is a power transistor manufactured by Onsemi, featuring an N-channel configuration. It is designed to handle a maximum voltage of 600 V and a continuous current of 20 A when appropriately mounted with a heatsink, which allows it to dissipate up to 208 W of power. Encased in a TO-3PN through-hole package, this device exhibits a gate threshold voltage of 5 V at a gate current of 250 µA. Additionally, it possesses a total gate charge of 98 nC at a gate-source voltage of 10 V and can endure gate-source voltages of up to ±30V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.