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FCA16N60N-Channel 600 V 16A (Tc) 167W (Tc) Through Hole TO-3PN

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ABRmicro #.ABR2045-FCA16N-1005502
ManufacturerOnsemi
MPN #.FCA16N60
Estimated Lead Time-
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In Stock: 20
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCA16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation167W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 8A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCA16N60 by Onsemi is an N-channel MOSFET designed for high-power applications, featuring a drain-to-source voltage rating of 600 volts and a continuous drain current of 16 amperes when properly mounted and cooled. It is capable of dissipating up to 167 watts of power at the case temperature, making it suitable for high-efficiency switching. The device comes in a TO-3PN through-hole package, facilitating thermal management and integration into various circuit designs. The MOSFET also has a gate-to-source voltage tolerance of ±30 volts and a total gate charge of 2250 pF at a test voltage of 25 volts, with a typical gate threshold voltage of 10 volts, ensuring effective control and operation in the desired circuits.
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