Image is for reference only, the actual product serves as the standard.
FCA16N60N-Channel 600 V 16A (Tc) 167W (Tc) Through Hole TO-3PN
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FCA16N-1005502
ManufacturerOnsemi
MPN #.FCA16N60
Estimated Lead Time-
SampleGet Free Sample
DatasheetFCA16N60(_F109)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
Technical Specifications
SeriesSuperFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFCA16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation167W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 8A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FCA16N60 by Onsemi is an N-channel MOSFET designed for high-power applications, featuring a drain-to-source voltage rating of 600 volts and a continuous drain current of 16 amperes when properly mounted and cooled. It is capable of dissipating up to 167 watts of power at the case temperature, making it suitable for high-efficiency switching. The device comes in a TO-3PN through-hole package, facilitating thermal management and integration into various circuit designs. The MOSFET also has a gate-to-source voltage tolerance of ±30 volts and a total gate charge of 2250 pF at a test voltage of 25 volts, with a typical gate threshold voltage of 10 volts, ensuring effective control and operation in the desired circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.