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EMF18XV6T5GPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA 140MHz 500mW Surface Mount SOT-563
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ABRmicro #.ABR2045-EMF18X-919955
ManufacturerOnsemi
MPN #.EMF18XV6T5G
Estimated Lead Time-
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DatasheetEMF18XV6T5(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberEMF18
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 120 @ 1mA, 6V
Frequency - Transition140MHz
Mounting StyleSurface Mount
Power - Max500mW
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Package Type (Mfr.)SOT-563
Transistor Type1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)50V, 60V
Package / CaseSOT-563, SOT-666
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)