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ECH8310-TL-HP-Channel 30 V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH

1:$0.8040

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ABRmicro #.ABR2045-ECH831-999430
ManufacturerOnsemi
MPN #.ECH8310-TL-H
Estimated Lead Time28 Weeks
SampleGet Free Sample
DatasheetDatasheetECH8310(PDF)
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8040
Ext. Price$ 0.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8040$0.8040
10$0.6970$6.9700
100$0.4830$48.3440
500$0.4040$201.8750
1000$0.3440$344.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberECH8310
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
RDS(on) Drain-to-Source On Resistance17mOhm @ 4.5A, 10V
Package Type (Mfr.)8-ECH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The ECH8310-TL-H is a P-channel MOSFET manufactured by Onsemi, designed for surface-mount applications. It operates with a drain-source voltage of up to 30V and supports continuous drain current up to 9A at a given ambient temperature (Ta), with a power dissipation of 1.5W. The MOSFET features gate-source voltage ratings of 4V and 10V, which allows flexibility in various circuit configurations. It also exhibits an input capacitance of 1400 pF at a gate-source voltage of 10V, ensuring efficient switching performance. The device is housed in an 8-ECH package, suitable for compact electronic assemblies.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.