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CPH6341-M-TL-WP-Channel 30 V 5A (Ta) 1.6W (Ta) Surface Mount 6-CPH

1:$0.4950

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ABRmicro #.ABR2045-CPH634-990321
ManufacturerOnsemi
MPN #.CPH6341-M-TL-W
Estimated Lead Time28 Weeks
SampleGet Free Sample
DatasheetDatasheetMOSFETs(PDF)
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4950
Ext. Price$ 0.4950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4950$0.4950
10$0.4200$4.1970
100$0.2920$29.2190
500$0.2270$113.6880
1000$0.1850$184.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCPH6341
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance59mOhm @ 3A, 10V
Package Type (Mfr.)6-CPH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 1mA
Package / CaseSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MOSFETs
Environmental Information
Material Declaration CPH6341-M-TL-Wonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The CPH6341-M-TL-W is a surface-mount P-Channel MOSFET manufactured by Onsemi, designed to manage DC loads with a maximum drain-source voltage of 30V and a continuous drain current of up to 5A under standard ambient conditions. It features a power dissipation capacity of 1.6W and exhibits an on-resistance of 59 milliohms at a drain current of 3A and gate-source voltage of 10V. The device is housed in a compact 6-CPH package, making it suitable for high-density circuit designs. Additionally, it provides a gate threshold voltage of 2.6V at a test current of 1mA and a total gate charge of 10 nC at 10V, enabling efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.