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CPH3427-TL-EN-Channel 100 V 1A (Ta) 1W (Ta) Surface Mount 3-CPH

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ABRmicro #.ABR2045-CPH342-1004090
ManufacturerOnsemi
MPN #.CPH3427-TL-E
Estimated Lead Time-
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DatasheetDatasheetCPH3427-TL-E(PDF)
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In Stock: 21000
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Bulk
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C1A (Ta)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)240 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance630mOhm @ 500mA, 10V
Package Type (Mfr.)3-CPH
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseSC-96
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Datasheets
CPH3427-TL-E
Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
US ECCNEAR99
HTSUS0000.00.0000 (No rates found in the Harmonized Tariff Schedule)
Additional Details
The part number CPH3427-TL-E, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mount applications. It features a maximum drain-source voltage of 100 V and a continuous drain current of 1 A under ambient temperature conditions. The device exhibits a low on-resistance of 630 mOhm at a drain current of 500 mA and gate-source voltage of 10 V. It also has an input capacitance of 240 pF at a drain-source voltage of 20 V. The component is packaged in a compact 3-CPH configuration, ensuring efficient heat dissipation with a power dissipation rating of 1W in a standard ambient environment.
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