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CPH3360-TL-WP-Channel 30 V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH

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ABRmicro #.ABR2045-CPH336-1037420
ManufacturerOnsemi
MPN #.CPH3360-TL-W
Estimated Lead Time-
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DatasheetDatasheetCPH3360(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberCPH336
Continuous Drain Current (ID) @ 25°C1.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)2.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)82 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance303mOhm @ 800mA, 10V
Package Type (Mfr.)3-CPH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Extended Links
Datasheets
CPH3360
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Mult Devices 28/Apr/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The CPH3360-TL-W is a P-Channel MOSFET manufactured by Onsemi. It is designed for surface-mount applications and features a maximum voltage rating of 30 V and a continuous current rating of 1.6 A at ambient temperature (Ta), with a power dissipation of 900 mW. The device exhibits a low on-resistance of 303 milliohms at a current of 800 mA and a gate-source voltage of 10 V. Additionally, the MOSFET supports a gate-source voltage range of ±20 V, making it suitable for various electronic applications requiring efficient voltage control. The package type is 3-CPH, which facilitates easy integration into compact circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.