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CPH3360-TL-HP-Channel 30 V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH

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ABRmicro #.ABR2045-CPH336-930998
ManufacturerOnsemi
MPN #.CPH3360-TL-H
Estimated Lead Time-
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DatasheetDatasheetCPH3360(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberCPH336
Continuous Drain Current (ID) @ 25°C1.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)2.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)82 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance303mOhm @ 800mA, 10V
Package Type (Mfr.)3-CPH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CPH3360
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab Site Addition 03/Dec/2014
PCN Design/Specification
Copper Wire Update 02/Dec/2014Raw Material Change 22/Jul/2015
PCN Obsolescence/ EOL
EOL 18/Oct/2016
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The CPH3360-TL-H is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with a 3-CPH package. It is rated for a maximum voltage of 30V and can handle a continuous drain current of 1.6A in ambient conditions (Ta), with a power dissipation of 900mW. This device features a typical gate charge of 2.2 nanocoulombs at 10V gate-to-source voltage and exhibits a drain-source on-state resistance of 303 milliohms at a drain current of 800mA and a gate voltage of 10V. It supports gate-source voltages up to 10V, with an operational threshold at 4V. This MOSFET is suitable for efficient power management and switching tasks in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.