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BSS138LT7GN-Channel 50 V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
N/A
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ABRmicro #.ABR2045-BSS138-987468
ManufacturerOnsemi
MPN #.BSS138LT7G
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberBSS138
Continuous Drain Current (ID) @ 25°C200mA (Ta)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.75V, 5V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)50 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation225mW (Ta)
RDS(on) Drain-to-Source On Resistance3.5Ohm @ 200mA, 5V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS138LT7G by Onsemi is an N-channel MOSFET designed for surface mount applications, housed in a SOT-23-3 package. It operates with a maximum drain-source voltage of 50V and can handle a continuous current of up to 200mA at ambient temperature. This MOSFET offers a low on-state resistance of 3.5 Ohms at 200mA with a gate-source voltage of 5V. It is capable of dissipating power up to 225mW at ambient temperatures. The part is suitable for low-power switching applications where space is a constraint, owing to its compact form factor.
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