ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
BSS123WN-Channel 100 V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSS123-960957
ManufacturerOnsemi
MPN #.BSS123W
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetBSS123W(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberBSS123
Continuous Drain Current (ID) @ 25°C170mA (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)71 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation200mW (Ta)
RDS(on) Drain-to-Source On Resistance6Ohm @ 170mA, 10V
Package Type (Mfr.)SOT-323
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseSC-70, SOT-323
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BSS123W
Environmental Information
Material Declaration BSS123Wonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 14/Jan/2022Mult Dev EOL 24/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS123W is an N-channel MOSFET transistor manufactured by Onsemi, designed for surface-mount applications in the SOT-323 package. It is capable of handling a maximum voltage of 100V and a continuous current of 170mA at ambient temperature conditions (Ta). The device dissipates up to 200mW of power under these conditions. The MOSFET features a gate threshold voltage range of 4.5V to 10V and exhibits a drain-source on-state resistance of 6 ohms when operated at 170mA and 10V. Additionally, the device has a gate-source voltage drop (Vgs) of 2V at a drain current of 1mA. This compact transistor is suitable for enhancing the performance of electronic circuits by efficiently controlling the flow of current.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.