ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
BS170-D75ZN-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3

1:$0.3330

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BS170--1031748
ManufacturerOnsemi
MPN #.BS170-D75Z
Estimated Lead Time12 Weeks
SampleGet Free Sample
DatasheetDatasheetBS170 Datasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 4867
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Cut Tape (CT)Tape & Box (TB)
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3330
Ext. Price$ 0.3330
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2560$2.5610
100$0.1540$15.4060
500$0.1420$71.1880
1000$0.0970$96.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Cut Tape (CT)
Tape & Box (TB)
Lifecycle StatusActive
Base Product NumberBS170
Continuous Drain Current (ID) @ 25°C500mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)40 pF @ 10 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830mW (Ta)
RDS(on) Drain-to-Source On Resistance5Ohm @ 200mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BS170 Datasheet
Environmental Information
Material Declaration BS170-D75Zonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Site Transfer
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017TO92 Packing Updates 01/Jul/2015
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BS170-D75Z is an N-channel MOSFET manufactured by Onsemi, designed for use in low-power electronic circuits. It can handle a maximum drain-source voltage of 60 volts and a continuous drain current of 500 milliamperes when operating at temperature conditions specific to the case (Ta). With a power dissipation capacity of 830 milliwatts at similar conditions, this component is encapsulated in a TO-92-3 through-hole package, facilitating easy handling and mounting on circuit boards. It features a typical input capacitance of 40 picofarads at a gate-source voltage of 10 volts, making it suitable for various switching applications in electronic devices.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.