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BS107ARL1N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
N/A
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ABRmicro #.ABR2045-BS107A-1013355
ManufacturerOnsemi
MPN #.BS107ARL1
Estimated Lead Time-
SampleGet Free Sample
DatasheetBS107, BS107A(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBS107
Continuous Drain Current (ID) @ 25°C250mA (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)60 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation350mW (Ta)
RDS(on) Drain-to-Source On Resistance6.4Ohm @ 250mA, 10V
Package Type (Mfr.)TO-92 (TO-226)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BS107ARL1 is an N-channel MOSFET manufactured by Onsemi, designed for efficient power switching applications. It is capable of handling a maximum voltage of 200 V and a continuous current of 250 mA. Encased in a TO-92 (TO-226) through-hole package, this MOSFET is suitable for low-power applications with a power dissipation capacity of 350 mW. It has a gate-source voltage tolerance of ±20V and exhibits an on-state resistance of 6.4 ohms when operating at 250 mA and a gate-to-source voltage of 10 V.
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