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BFL4026N-Channel 900 V 3.5A (Ta) 2W (Ta), 35W (Tc) Through Hole TO-220FI(LS)

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ABRmicro #.ABR2045-BFL402-967149
ManufacturerOnsemi
MPN #.BFL4026
Estimated Lead Time-
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DatasheetDatasheetBFL4026(PDF)
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In Stock: 16
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusObsolete
Base Product NumberBFL40
Continuous Drain Current (ID) @ 25°C3.5A (Ta)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)650 pF @ 30 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance3.6Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220FI(LS)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BFL4026 is a semiconductor component manufactured by Onsemi, featuring an N-Channel MOSFET designed for high-voltage applications. It operates at a voltage rating of 900 V with a continuous current of 3.5A when considering ambient temperature (Ta) and a power dissipation of 2W at Ta or 35W at case temperature (Tc). Encapsulated in a Through Hole TO-220FI(LS) package, it offers a maximum on-state resistance of 3.6 Ohms at 2.5A and 10V. Additionally, it possesses a gate charge capacity of 650 pF at 30 V, making it suitable for efficient switching performance in its voltage class.
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